半导体分立器件综合测试仪 IST8800

厂家: 美国IST

说明书下载

本仪器是美国IST公司最新研制的产品(IST880的升级换代产品)，采用Z80芯片，微机控制，液晶显示其测试条件及测量结果，可用于对晶体三极管，二极管，齐纳二极管，J型场效应管，可控硅管。，三端双向可控硅管和三端稳压器进行直流参数的测试，并可自动进行合格/不合格判断，对器件进行分选.本仪器并配有RS232C串联接口和IEEE488接口，可配接电脑数据记录仪及打印机，打印出测试条件及结果。并可以对各类器件的予置测试条件进行存储。关机后，仍可保存在机内，以备下一次的使用。

IST8800提供了40种测量参数，它们分别为：

性能特点：

性能指标

三极管漏电流 Icbo  Iceo  Ices  Iebo  Icev
 电流 电压 分辨率  误差
0 - 200.0 nA 0 - 600V 0.1nA ±2%
0 - 200μA 0 - 600V 1 nA ±1.5%
0 - 200.0μA 0 - 600V 1.1μA ±1%
0 - 20.00mA 0 - 500V 10μA ±1%
三级管击穿电压 BVcbo BVebo BVcer BVces BVcev
电压 电流 分辨率 误差
0 - 600V 0 - 30mA 3V ±1%
0 - 30V 0 - 200mA 0.1V ±1%
三极管正向导通电压 Vve(sat) Vbe(sat)
电压 电流 分辨率 误差
0 - 5V 0 - 5A  2mV ±2%
0 - 2V 0 - 1A 1mV ±2%
三极管电流增益 hFE
量程 分辨率 误差
hFE 0 - 5000 1 ±2%
Vce 0 - 20V
Ic 0 - 5A
Ib 0 - 1A
二极管反向电流 Ir
电流 电压 分辨率 误差
0 - 200.0nA 0 - 600V 0.1nA ±2%
0 - 200.0μA 0 - 600V 1 nA ±1.5%
0 - 2.00μA 0 - 600V 0.1μA ±1%
0 - 20.00mA 0 - 500V 10μA ±1%
二极管反向击穿电压 BVr
C 电流 分辨率 误差
0 - 30V 0 - 200mA  0.1V ±2%
0 - 600V 0 - 20mA 3V ±2%
二极管正向工作电压 Vf
电压 电流 分辨率 误差
0 - 5V 0 - 5A 2mV ±2%
稳压二极管 BVz
电压 电流 分辨率 误差
0 - 300V 0 30mA 1V ±1%
0 - 60V 0 200mA 0.3V ±1.5%
0 - 40V 0 - 1mA 0.1V ±1%
稳压二极管 Izr
电流 电压 分辨率 误差
0 - 500mA 0 30V 2mA ±1%
0 - 100mA 0 60V 0.4mA ±1%
0 - 20mA 0 250V 80nA ±2.5%
 稳压二极管 Vzr
电流 电压 分辨率 误差
0 - 300V 0 - 30mA 1V ±1%
0 - 60V 0 - 200mA 0.3V ±1.5%
0 - 40V  0 - 1A 0.1V ±1%
稳压二极管 Vzf
电压 电流 分辨率 误差
0 - 5V 0 - 5A 2mv  ±1%
J/M型场效应管饱和漏源电流 Idss
电流 电压 分辨率 误差
0 - 0.2A 0 - 30V 10μA ±2%
0 - 30mA 0 - 300V  1μA ±2%
J型场效应管栅极漏电流 Igss
电流 电压 分辨率 误差
0 - 20.00mA 0 - 30V 10μA ±2%
0 - 200.0μA 0 - 30V 0.1μA ±1.5%
0 - 2.00μA 0 - 30V 1nA ±1.5%
0 - 200.0nA 0 - 30V 0.1nA ±1.5%
J型场效应管栅极电压 BVgss
电压 电流 分辨率  误差
0 - 300V 0 - 30mA 1v ±2%
0 - 30V 0 - 200mA  0.2v ±1.5%
可控硅整流器件及双向可控硅开关器件 Vgt(可控硅和三端双向可控硅触发电压) Igt(触发电流)
电流 电压 分辨率 误差
0 - 100.00mA 0 - 40V 50μA ±1.5%
0 - 10.00mA 0 - 40V 5μA ±1.5%
0 - 1.00mA 0 - 40V 0.5μA ±2%
三端稳压电源集成块
- 量程范围 分辨率 误差
Vo 0 ±28V 0.1V ±2%
Iib 0 ±20mA 1μA ±2%

J型场效应管跨导gm

测试范围

分辨率

精度

测试条件

0 ～ 99mMHo 0.05mMHo

+/-1%

0 ～ 30V

0 ～ 99μMHo 0.05μMHo

+/-1%

0 ～ 30V

0 ～ 99nMHo 0.05nMHo

+/-2%

0 ～ 30V

Programmable Parametric Tester for Discrete Semiconductors (IST-8800)

  • Tests MOS-FETs, TRIACs, SCRs, Diodes, Transistors, Regulators, Zeners, and J-FETs
    　
  • Performs parametric measurements or Go/No Go tests on over 40 device parameters
    　
  • Built-in relay matrix offers accurate and versatile measurements from the nano amp range up to 1,200V
    　
  • Battery back-up RAM stores user written test routines for "one-time set-up" operation
    　
  • Automatically detects any open, short, or malfunctioning junction of the DUT prior to applying power
    　
  • IEEE-488, High Voltage, and Automatic Handler Interface ports
    　
  • Self calibrating software

The IST-8800 is a fully programmable, low cost tester that provides parameter measurements or parametric GO/NO GO test for transistors, diodes, MOS-FETs, Regulators, Triacs, Zeners, SCRs, and J-FETs. These devices can be tested up to 5 amps or 1200 volts with a measurement range down to the nano amp range. Only four universal test fixtures are required which can test the device across a wide range of packages.

The user-friendly resident software simplifies the operation and programming of the 8800 while the "Quick Set" function provides a means for running fast one-time-test setups. User written routines can be stored in the battery back-up memory for future use. The 8800 is a "Stand Alone" instrument so no additional software, hardware, or special training is required to operate the unit.

The 8800 uses a relay matrix to connect the required test circuits, select the voltage/current sources and establish the needed mesaurement loops. With the auto polarity capability, it identifies the device type (NPS or PNP, P-ch or N-ch) and applies the appropriate circuits to the DUT automatically. The following parameters can be tested:

  • TRANSISTOR: Icbo, Iceo, Iebo, BVcbo, BVebo, BVceo, Bce(sat), Vbe(sat), hFE, Icer, Ices, Icev, BVcer, BVces, BVcev
    　
  • DIODE: Ir, BVr, Vf
    　
  • ZENER DIODE: BVZ, IZR, VZR, VZF
    　
  • J-FET: Idss, Igss, BVgss, gm
    　
  • SCR &TRIAC: +/- Igt, +/- Vgt, Ih
    　
  • VOLTAGE REGULATOR: +/- Vo, +/- Iib, delta V
    　
  • MOS-FET: Idss, Igss, BVdss, Vgs(th)
    　
SPECIFICATIONS:

Dimensions: 4.5" x 17.2" x 16.5" (11.4cm x 43.7cm x 41.9cm
Shipping Weight: 16.0lbs (7.2kg)
Power Requirements: 115VAC or 230VAC 10%, 50 or 60Hz., Approx. 35W
Accessories Furnished: Power cord, instruction manual
Optional accessories:

  1. Test fixture for diode axial lead
    　
  2. Test fixture for TO-220, 218, 202, 237, 126, 92
    　
  3. Test fixture for TO-5, 18, 39, 205 MA
    　
  4. Test fixture for TO-3, 66, 204 MA
    　
  5. High voltage interfact/adaptor for testing up to 1200V

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